High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics

Mindaugas Lukosius; Ch. Walczyk; Mirko Fraschke; D. Wolansky; Hans Richter; Christian Wenger

doi:10.1016/j.tsf.2010.01.060

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High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics

Mindaugas Lukosius Ch. Walczyk Mirko Fraschke D. Wolansky Hans Richter Christian Wenger

Year: 2010 Journal: Thin Solid Films Vol: 518 (15)Pages: 4380-4384 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2010.01.060

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Keywords:

Tin Dielectric Materials science Atomic layer deposition Capacitance Amorphous solid High-κ dielectric Capacitor Chemical vapor deposition Analytical Chemistry (journal) Metal-insulator-metal Metal gate Thin film Optoelectronics Nanotechnology Metallurgy Chemistry Voltage Electrical engineering Electrode Crystallography Gate oxide

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ferroelectric and Negative Capacitance Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Copper Interconnects and Reliability

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics

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