ChemInform Abstract: SEMICONDUCTOR ELECTRODES. 24. BEHAVIOR OF PHOTOELECTROCHEMICAL CELLS BASED ON N P‐TYPE GALLIUM ARSENIDE IN AQUEOUS SOLUTIONS

F.‐R. F. FAN; Allen J. Bard

doi:10.1002/chin.198035012

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ChemInform Abstract: SEMICONDUCTOR ELECTRODES. 24. BEHAVIOR OF PHOTOELECTROCHEMICAL CELLS BASED ON N P‐TYPE GALLIUM ARSENIDE IN AQUEOUS SOLUTIONS

F.‐R. F. FAN Allen J. Bard

Year: 1980 Journal: Chemischer Informationsdienst Vol: 11 (35) Publisher: Wiley

DOI: 10.1002/chin.198035012

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Abstract

Abstract Das elektrochemische Verhalten von einkristallinem p‐leitenden GaAs in wäßrigen, die Redox‐Paare 15/1′, Fe(III)/Fe(II), Sn(IV)/Sn(II) oder Eu(III)/Eu(II) enthaltenden Lösungen im Dunkeln und unter Bestrahlung wird beschrieben.

Keywords:

Chemistry Aqueous solution Gallium arsenide Semiconductor Gallium Electrode Redox Photoelectrochemistry Semiconductor materials Inorganic chemistry Nuclear chemistry Electrochemistry Optoelectronics Physical chemistry Materials science Organic chemistry

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Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Anodic Oxide Films and Nanostructures

Physical Sciences → Materials Science → Materials Chemistry

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

ChemInform Abstract: SEMICONDUCTOR ELECTRODES. 24. BEHAVIOR OF PHOTOELECTROCHEMICAL CELLS BASED ON N P‐TYPE GALLIUM ARSENIDE IN AQUEOUS SOLUTIONS

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