A room-temperature gate-tunable bipolar valley Hall effect in molybdenum disulfide/tungsten diselenide heterostructures

Chongyun Jiang; Abdullah Rasmita; Hui Ma; Qinghai Tan; Zhaowei Zhang; Zumeng Huang; Shen Lai; Naizhou Wang; Sheng Liu; Xue Liu; Ting Yu; Qihua Xiong; Weibo Gao

doi:10.1038/s41928-021-00686-7

JOURNAL ARTICLE

A room-temperature gate-tunable bipolar valley Hall effect in molybdenum disulfide/tungsten diselenide heterostructures

Chongyun Jiang Abdullah Rasmita Hui Ma Qinghai Tan Zhaowei Zhang Zumeng Huang Shen Lai Naizhou Wang Sheng Liu Xue Liu Ting Yu Qihua Xiong Weibo Gao

Year: 2021 Journal: Nature Electronics Vol: 5 (1)Pages: 23-27 Publisher: Nature Portfolio

DOI: 10.1038/s41928-021-00686-7

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Keywords:

Heterojunction Optoelectronics Molybdenum disulfide Hall effect Materials science Transistor Bipolar junction transistor Physics Magnetic field Voltage

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A room-temperature gate-tunable bipolar valley Hall effect in molybdenum disulfide/tungsten diselenide heterostructures

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