Gate Tunable Memtransistor based on Monolayer Molybdenum Disulfide

Abstract

As a typical representative of two-dimensional (2D) materials, recently Mos ₂ was considered as the candidate to the development of electronic synaptic devices due to its ultrathin thickness and special properties. However, dual-terminal artificial synapse devices still exit the challenges about the simulation of biological synapses, which is hard for two-terminal devices to update and read the synaptic weight at the same time. In this work, Mos ₂ films were grown by chemical vapor deposition (the sample's largest single triangular size is about 83μm), and three-terminal synaptic devices based on back-gate FETs on Si/SiO ₂ substrate were fabricated. MoS ₂ sample's morphology and device's structure were characterized by Raman spectroscopy and optical microscope (OM). The memtransistor has excellent resistive switching (RS) behavior. By optimizing the pulse, the memtransistor showed a better conductivity linearity, and typical synaptic characteristics were mimicked, such as short-term/long-term plasticity (STP/LTP), excitatory post-synaptic current (EPSC)/inhibitory post-synaptic current (IPSC) and paired-pulse facilitation (PPF).