Reverse Recovery and Rectification Characteristic of β-Ga₂ O₃ Schottky Barrier Diode

Abstract

A gallium oxide (β-Ga 2 O 3 ) Schottky barrier diode (SBD) is proposed and characterized. The fabricated diode has an area of 300 μm × 300 μm with a 12 μm unintentionally-doped (UID) (1.7 × 10 ¹⁶ cm ^-3 ) Ga 2 O 3 epitaxial layer on Sn doped (5.4 × 10 ¹⁸ cm ^-3 ) (010) Ga 2 O 3 substrate. The device has 1.02 kV breakdown voltage and 500 mA forward current at 5.5 V. The reverse recovery characteristic and the rectification capability of the diode are experimentally studied. The Ga 2 O 3 SBD shows a high potential for power device application such as pulse power application.