Schottky Barrier Diode Fabricated on Single Crystal β-Ga<sub>2</sub>O<sub>3</sub> Semiconductor

Hyun‐Seop Kim; Min-Gi Jo; Ho‐Young Cha

doi:10.5573/ieie.2017.54.1.021

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Schottky Barrier Diode Fabricated on Single Crystal β-Ga₂O₃ Semiconductor

Hyun‐Seop Kim Min-Gi Jo Ho‐Young Cha

Year: 2017 Journal: Journal of the Institute of Electronics and Information Engineers Vol: 54 (1)Pages: 21-25

DOI: 10.5573/ieie.2017.54.1.021

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Keywords:

Schottky diode Optoelectronics Schottky barrier Materials science Semiconductor Diode Metal–semiconductor junction Crystal (programming language) Computer science

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Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Advanced Photocatalysis Techniques

Physical Sciences → Energy → Renewable Energy, Sustainability and the Environment

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Schottky Barrier Diode Fabricated on Single Crystal β-Ga₂O₃ Semiconductor

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Schottky Barrier Diode Fabricated on Single Crystal β-Ga2O3 Semiconductor

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Citation History

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Compact Model of β-Ga2O3 Schottky Barrier Diode

Lateral β-Ga2O3 Schottky barrier diode fabricated on (–201) single crystal substrate and its temperature-dependent current–voltage characteristics

Hydrogen Sensitive Schottky Diode Based on β-Ga2O3 Single Crystal

Reverse Recovery and Rectification Characteristic of β-Ga2 O3 Schottky Barrier Diode

Vertical β-Ga2O3 Schottky Barrier Diode with the Composite Termination Structure

Schottky Barrier Diode Fabricated on Single Crystal β-Ga₂O₃ Semiconductor

Compact Model of β-Ga₂O₃ Schottky Barrier Diode

Lateral β-Ga₂O₃ Schottky barrier diode fabricated on (–201) single crystal substrate and its temperature-dependent current–voltage characteristics

Hydrogen Sensitive Schottky Diode Based on β-Ga₂O₃ Single Crystal

Reverse Recovery and Rectification Characteristic of β-Ga₂ O₃ Schottky Barrier Diode

Vertical β-Ga₂O₃ Schottky Barrier Diode with the Composite Termination Structure