Transport properties of B/P doped graphene nanoribbon field-effect transistor

Chenkang Rui; Cheng Shao; Jiaxu Liu; Aqing Chen; Kaigui Zhu; Qingyi Shao

doi:10.1016/j.mssp.2021.105826

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Transport properties of B/P doped graphene nanoribbon field-effect transistor

Chenkang Rui Cheng Shao Jiaxu Liu Aqing Chen Kaigui Zhu Qingyi Shao

Year: 2021 Journal: Materials Science in Semiconductor Processing Vol: 130 Pages: 105826-105826 Publisher: Elsevier BV

DOI: 10.1016/j.mssp.2021.105826

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Keywords:

Materials science Graphene Doping Transistor Condensed matter physics Scattering Electron Field-effect transistor Electron transport chain Voltage Optoelectronics Electrode Hamiltonian (control theory) Biasing Nanotechnology Physics Quantum mechanics

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Graphene research and applications

Physical Sciences → Materials Science → Materials Chemistry

Quantum and electron transport phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Molecular Junctions and Nanostructures

Physical Sciences → Engineering → Electrical and Electronic Engineering

Transport properties of B/P doped graphene nanoribbon field-effect transistor

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