Semi-Empirical Modeling of Electrically Doped Graphene Nanoribbon Field Effect Transistor

Abstract

Graphene nanoribbon (GNR) is one of the most promising candidates for the near future generation of nanoelectronics. In this study electrically doped GNR MOSFET structure is virtually fabricated utilizing Quantum Wise Atomistix Toolkit software package. The virtual model of MOSFET is designed employing electrical doping procedure to eliminate the fabrication fault and excess heat generation resulting from ionic bombardment. The n-type and p-type doping concentrations are 1×10 ¹² cm ^-3 and 1×10 ⁹ cm ^-3 respectively. Zigzag nanoribbon(ZGNR) on both sides are acting as source and drain which is n-doped regions, where as Armchair nanoribbon(AGNR) which is acting as substrate, is p-type doped are merged together to form the Z-shaped hetero junction where the armchair portion is 30 ^° rotated to make it perfect atomic interface with zigzag nanoribbon. High-k dielectric constant is used to scale down the thickness of equivalent gate oxide and improves the on-off current ratio as well as to eliminate the leakage current. The proposed device is 4.838nm long, 2.7nm wide and 1nm thick. This structure is simulated utilizing Atomistix Semi-empirical Extended Hückel theory (ATK-SE) with Non-Equilibrium Green's Function formalization (NEGF), which helps us to obtain as well as study various analyses with respect to different biased condition.