Surface passivation of germanium by atomic layer deposited Al2O3 nanolayers

Wilhelmus J. H. Berghuis; Jimmy Melskens; Bart Macco; Roel J. Theeuwes; Marcel A. Verheijen; W. M. M. Kessels

doi:10.1557/s43578-020-00052-x

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Surface passivation of germanium by atomic layer deposited Al2O3 nanolayers

Wilhelmus J. H. Berghuis Jimmy Melskens Bart Macco Roel J. Theeuwes Marcel A. Verheijen W. M. M. Kessels

Year: 2021 Journal: Journal of materials research/Pratt's guide to venture capital sources Vol: 36 (3)Pages: 571-581 Publisher: Springer Nature

DOI: 10.1557/s43578-020-00052-x

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Keywords:

Passivation Materials science Atomic layer deposition Germanium Substrate (aquarium) Layer (electronics) Deposition (geology) Semiconductor Analytical Chemistry (journal) Silicon Nanotechnology Optoelectronics Chemistry

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Surface passivation of germanium by atomic layer deposited Al2O3 nanolayers

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