Blue Femtosecond Laser-Induced Crystallization of Amorphous Silicon

Kuan‐Wen Chen; Yichao Wang; Shih-Hsuan Kao; Po-Hsun Wu; Ci‐Ling Pan

doi:10.1364/cleo_at.2020.jtu2b.9

ScienceGate Book Chapters

JOURNAL ARTICLE

Blue Femtosecond Laser-Induced Crystallization of Amorphous Silicon

Kuan‐Wen Chen Yichao Wang Shih-Hsuan Kao Po-Hsun Wu Ci‐Ling Pan

Year: 2020 Journal: Conference on Lasers and Electro-Optics Vol: 75 Pages: JTu2B.9-JTu2B.9

DOI: 10.1364/cleo_at.2020.jtu2b.9

Get Full-Text PDF Get Analytical Report

Abstract

Amorphous silicon was crystallized using a blue ultrafast Ti:Sapphire laser system. Polysilicon with average grain size of 280 nm was achieved with fluence 30 of mJ/cm 2 and overlapping of 93.75% at room temperature.

Keywords:

Materials science Femtosecond Silicon Amorphous silicon Fluence Amorphous solid Crystallization Sapphire Laser Optoelectronics Ultrashort pulse Optics Crystalline silicon Crystallography Chemical engineering Chemistry

Metrics

Cited By

0.00

FWCI (Field Weighted Citation Impact)

Refs

0.21

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Laser Material Processing Techniques

Physical Sciences → Engineering → Computational Mechanics

Cultural Heritage Materials Analysis

Social Sciences → Arts and Humanities → Archeology

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Blue Femtosecond Laser-Induced Crystallization of Amorphous Silicon

Abstract

Metrics

Topics

Related Documents

Near-infrared femtosecond laser-induced crystallization of amorphous silicon

Femtosecond laser induced crystallization of hydrogenated amorphous silicon for photovoltaic applications

Crystallization of amorphous silicon film induced by a near-infrared femtosecond laser

Femtosecond laser-induced crystallization in amorphous Ge2Sb2Te5 films

Arbitrary surface structuring of amorphous silicon films based on femtosecond-laser-induced crystallization