Vertical‐Tunneling Field‐Effect Transistor Based on WSe₂‐MoS₂ Heterostructure with Ion Gel Dielectric

Abstract

Abstract A p‐type tunneling field‐effect transistor is demonstrated based on a van der Waals vertical heterostructure of WSe 2 and MoS 2 , utilizing the ion gel dielectric as top gate. Band‐to‐band tunneling is achieved by modulating the band alignment of the heterojunction of WSe 2 and MoS 2 with gating the WSe 2 channel through ion gel top gate. A fabricated tunneling field‐effect transistor shows a minimum subthreshold swing of 36 mV dec −1 and ON/OFF current ratio of 10 6 at room temperature. Furthermore, evidence of band‐to‐band tunneling is clearly confirmed through temperature dependent I–V characteristics. This work holds considerable promise for the low‐power computational devices based on integrated circuits.