Flexible Top-Gated Monolayer MoS₂ Transistors with High Mobility

Abstract

Flexible electronics could greatly benefit from the realization of large-scale field-effect transistors (FETs) based on two-dimensional (2D) materials that exhibit high carrier mobility, flexibility, and transparency [1]. As high-quality 2D materials are synthesized at high temperatures $> 500\ {}^{\circ}\mathrm{C}$ , they must rely on scalable processes for transfer to flexible substrates after growth. However, such transfer processes typically transfer the 2D material using scaffolds of poly(methyl methacrylate) (PMMA) and immersion in corrosive solutions, which can damage the 2D film and leave unwanted residues [2].