JOURNAL ARTICLE

Heteroepitaxial growth of α-Ga2O3 thin films on a-, c- and r-plane sapphire substrates by low-cost mist-CVD method

Keywords:
Sapphire Materials science Epitaxy Crystallinity Full width at half maximum Band gap Thin film X-ray photoelectron spectroscopy Semiconductor Lattice constant Optoelectronics Substrate (aquarium) Analytical Chemistry (journal) Crystallography Optics Nanotechnology Diffraction Chemistry Chemical engineering Composite material Physics

Metrics

54
Cited By
2.35
FWCI (Field Weighted Citation Impact)
29
Refs
0.88
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Ga2O3 and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials
ZnO doping and properties
Physical Sciences →  Materials Science →  Materials Chemistry
Advanced Photocatalysis Techniques
Physical Sciences →  Energy →  Renewable Energy, Sustainability and the Environment
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