Heteroepitaxial growth of α-Ga2O3 thin films on a-, c- and r-plane sapphire substrates by low-cost mist-CVD method

Yaolin Cheng; Yu Xu; Zhe Li; Jiaqi Zhang; Dazheng Chen; Qian Feng; Shengrui Xu; Hong Zhou; Jincheng Zhang; Yue Hao; Chunfu Zhang

doi:10.1016/j.jallcom.2020.154776

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Heteroepitaxial growth of α-Ga2O3 thin films on a-, c- and r-plane sapphire substrates by low-cost mist-CVD method

Yaolin Cheng Yu Xu Zhe Li Jiaqi Zhang Dazheng Chen Qian Feng Shengrui Xu Hong Zhou Jincheng Zhang Yue Hao Chunfu Zhang

Year: 2020 Journal: Journal of Alloys and Compounds Vol: 831 Pages: 154776-154776 Publisher: Elsevier BV

DOI: 10.1016/j.jallcom.2020.154776

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Keywords:

Sapphire Materials science Epitaxy Crystallinity Full width at half maximum Band gap Thin film X-ray photoelectron spectroscopy Semiconductor Lattice constant Optoelectronics Substrate (aquarium) Analytical Chemistry (journal) Crystallography Optics Nanotechnology Diffraction Chemistry Chemical engineering Composite material Physics

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Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Advanced Photocatalysis Techniques

Physical Sciences → Energy → Renewable Energy, Sustainability and the Environment

Heteroepitaxial growth of α-Ga2O3 thin films on a-, c- and r-plane sapphire substrates by low-cost mist-CVD method

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