Gallium Oxide for High‐Power Optical Applications

Abstract

Abstract Gallium oxide (Ga 2 O 3 ) is an emerging wide‐bandgap transparent conductive oxide (TCO) with potential applications for high‐power optical systems. Herein, Ga 2 O 3 fabricated nanostructures are described, which demonstrate high‐power laser induced damage threshold (LIDT). Furthermore, the demonstration of an electron accelerator based on Ga 2 O 3 gratings is reported. These unique Ga 2 O 3 nanostructures provide acceleration gradients exceeding those possible with conventional RF accelerators due to the high breakdown threshold of Ga 2 O 3 . In addition, the laser damage threshold and acceleration performance of a Ga 2 O 3 ‐based dielectric laser accelerator (DLA) are compared with those of a DLA based on sapphire, a material known for its high breakdown strength. Finally, the potential of Ga 2 O 3 thin‐film coatings as field reduction layers for Si nanostructures is shown; they potentially improve the effective LIDT and performance of Si‐based DLAs and other high‐power optical structures. These results could provide a foundation for new high‐power optical applications with Ga 2 O 3 .