Huiyang DengKenneth J. LeedleYu MiaoDylan S. BlackKarel UrbánekJoshua McNeurMartin KozákAndrew CeballosPeter HommelhoffOlav SolgaardRobert L. ByerJames S. Harris
In article number 1901522, Huiyang Deng and co-workers have leveraged the high laser damage threshold and moderate conductivity of Ga2O3 to demonstrate the first Ga2O3-based laser accelerator and show Ga2O3 as a promising material for high-power optical applications. With the distinct properties of Ga2O3 combined with advances in fabrication and wafer growth techniques, more Ga2O3-based high-power optical applications will be realized in the near future.
Sudheer KumarRakesh Kumar Singh
Mitsuo YamagaTatsuya IshikawaMasashi YoshidaTakamasa HasegawaEncarnación G. Vı́lloraKiyoshi Shimamura
Manuel Alonso‐OrtsGerwin ChillaRudolfo HötzelEmilio NogalesJ. San JuánM.L. NóMartin EickhoffBianchi Méndez
M. StoehrSandrine JuillaguetT. M. KyawJianguo Wen
Shuangqing GuHaijie GuoQiufeng ShiLei WangCai’e CuiYanxia CuiPing Huang