Abstract We present the results of optimization of microwave plasma generation in a prototypical diamond film deposition device by means of numerical simulation. The modification of the device was done by changing the shape of microwave resonant chamber, where the plasma generation occurs, in a way to focus the discharge near the outlet nozzle. The best results were obtained for a configuration with an addition of a conducting rod located on the axis of the chamber. This modified configuration provided a two orders of magnitude increase in electron number density near the nozzle exit and about 10 time increase (up to 5%) in dissociation degree of hydrogen molecules.
X.J. LiWeizhong TangF.Y. WangCongju LiL.F. HeiFan Lu
Jiaqi ZhuKaili YaoBing DaiVictor RalchenkoGuoyang ShuJiwen ZhaoKang LiuLei YangA. P. BolshakovJiecai Han
Kyongmo AnShengwang YuX.J. LiYanyan ShenBing ZhouGuangquan ZhangX.P. Liu