Deep-Ultraviolet β-Ga<sub>2</sub>O<sub>3</sub>Photodetectors Grown on MgO Substrates with a TiN Template

Kuang‐Hui Li; Nasir Alfaraj; Chun Hong Kang; Laurentiu Braic; C.N. Zoita; A. Kiss; Tien Khee Ng; Boon S. Ooi

doi:10.1109/ipcon.2019.8908509

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Deep-Ultraviolet β-Ga₂O₃Photodetectors Grown on MgO Substrates with a TiN Template

Kuang‐Hui Li Nasir Alfaraj Chun Hong Kang Laurentiu Braic C.N. Zoita A. Kiss Tien Khee Ng Boon S. Ooi

Year: 2019 Pages: 1-2

DOI: 10.1109/ipcon.2019.8908509

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Abstract

This work investigates β-Ga2O3 photodetectors grown on MgO substrates with a TiN template, showing peak responsivities of 34.91 and 224.09 A/W at 5 and 15V reverse-bias, respectively, for 250-nm incident-light wavelength. A mesa device structure exhibited a 213.75% peak-responsivity increase at 15 V reverse-bias.

Keywords:

Tin Responsivity Photodetector Ultraviolet Materials science Optoelectronics Wavelength

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Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Deep-Ultraviolet β-Ga₂O₃Photodetectors Grown on MgO Substrates with a TiN Template

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Deep-Ultraviolet β-Ga2O3Photodetectors Grown on MgO Substrates with a TiN Template

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