Lin WangLi ChenSwee Liang WongXin HuangWugang LiaoChunxiang ZhuYee‐Fun LimDabing LiXinke LiuDongzhi ChiKah‐Wee Ang
In article number 1900393, Xinke Liu, Dongzhi Chi, Kah-Wee Ang, and co-workers report the demonstration of diverse electronic building blocks including field-effect transistors, logic gates, and memristors. These building blocks are based upon wafer-scale monolayer MoS2 synthesized via a scalable chemical vapor deposition technique. By virtue of a fully complementary metal-oxide-semiconductor-compatible fabrication process, this work paves the way toward unleashing the potential of atomically thin MoS2 for practical next-generation ultrathin electronics.
Lin WangLi ChenSwee Liang WongXin HuangWugang LiaoChunxiang ZhuYee‐Fun LimDabing LiXinke LiuDongzhi ChiKah‐Wee Ang
Lixuan LiuKun YeZhipeng YuZhiyan JiaJianyong XiangAnmin NieFusheng WenCongpu MuBocong WangYing LiYongji GongZhongyuan Liu
Jiawei LiShuopei WangLi LüWei ZhengQinqin WangHuacong SunJinpeng TianYutuo GuoJieying LiuHua YuNa LiGen LongXuedong BaiWei YangRong YangDongxia ShiGuangyu Zhang
Berç KalanyanWilliam A. KimesRyan BeamsStephan J. StranickElias GarrattIrina KalishAlbert V. DavydovRavindra K. KanjoliaJames E. Maslar
Hongyue DuShuopei WangSongge ZhangYuchao ZhouTong LiHaoyang ChenYutong ChenLiang‐Feng HuangJieying LiuJiaojiao ZhaoXingchao ZhangHua YuShen LaiNa LiGuangyu Zhang