Electronic Devices and Circuits Based on Wafer‐Scale Polycrystalline Monolayer MoS₂ by Chemical Vapor Deposition

Abstract

Abstract 2D layered materials such as graphene and transition‐metal dichalcogenides (TMDCs) have emerged as promising candidates for next‐generation nanoelectronic applications due to their atomically thin thicknesses and unique electronic properties. Among TMDCs, molybdenum disulfide (MoS 2 ) has been extensively investigated as a channel material for field‐effect transistor (FET) and circuit realization. However, to date most reported works have been limited to exfoliated MoS 2 nanosheets primarily due to the difficulty in synthesizing large‐area and high‐quality MoS 2 thin film. A demonstration of wafer‐scale monolayer MoS 2 synthesis is reported by chemical vapor deposition (CVD), enabling transistors, memristive memories, and integrated circuits to be realized simultaneously. Specifically, building on top‐gated FETs with a high‐κ gate dielectric (HfO 2 ), Boolean logic circuits including inverters and NAND gates are successfully demonstrated using direct‐coupled FET logic technology, with typical inverters exhibiting a high voltage gain of 16, a large total noise margin of 0.72 V DD at V DD = 3 V, and perfect logic‐level matching. Additionally, resistive switching is demonstrated in a MoS 2 ‐based memristor, indicating that they have great potential for the development of resistive random‐access memory. By virtue of scalable CVD growth capability, the way toward practical and large‐scale electronic applications of MoS 2 is indicated.