Electrical properties of Bi-implanted amorphous chalcogenide films

Yanina Fedorenko; Mark Hughes; Julien L. Colaux; C. Jeynes; R. Gwilliam; K.P. Homewood; Behrad Gholipour; Jin Yao; Daniel W. Hewak; T.-H. Lee; S. R. Elliott; Richard J. Curry

doi:10.1016/j.tsf.2015.05.036

JOURNAL ARTICLE

Electrical properties of Bi-implanted amorphous chalcogenide films

Yanina Fedorenko Mark Hughes Julien L. Colaux C. Jeynes R. Gwilliam K.P. Homewood Behrad Gholipour Jin Yao Daniel W. Hewak T.-H. Lee S. R. Elliott Richard J. Curry

Year: 2015 Journal: Thin Solid Films Vol: 589 Pages: 369-375 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2015.05.036

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Keywords:

Chalcogenide Materials science Ion implantation Amorphous solid Conductivity Semiconductor Electrical resistivity and conductivity Optoelectronics Amorphous silicon Analytical Chemistry (journal) Silicon Ion Chemistry Crystallography Crystalline silicon Electrical engineering Physical chemistry

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Phase-change materials and chalcogenides

Physical Sciences → Materials Science → Materials Chemistry

Solid-state spectroscopy and crystallography

Physical Sciences → Materials Science → Materials Chemistry

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electrical properties of Bi-implanted amorphous chalcogenide films

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