ChemInform Abstract: Highly Selective Reactive Ion Etching of Polysilicon with Hydrogen Bromide.

L. Tsou

doi:10.1002/chin.199004317

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ChemInform Abstract: Highly Selective Reactive Ion Etching of Polysilicon with Hydrogen Bromide.

L. Tsou

Year: 1990 Journal: ChemInform Vol: 21 (4) Publisher: Wiley

DOI: 10.1002/chin.199004317

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Abstract

Abstract It is demonstrated that a HBr plasma etches polysilicon anisotropically at low power with extremely high selectivity to both gate oxide and photoresist.

Keywords:

Chemistry Hydrogen bromide Bromide Etching (microfabrication) Reactive-ion etching Ion Hydrogen Inorganic chemistry Nanotechnology Organic chemistry Bromine

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Analytical Chemistry and Sensors

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ChemInform Abstract: Highly Selective Reactive Ion Etching of Polysilicon with Hydrogen Bromide.

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