Si-Won KimHyo-Ju LeeSemi OhBeom-Rae NohSo‐Yeon ParkYe-Bin ImSuyeon SonYong Won SongKyoung‐Kook Kim
We investigated the optical and electrical properties of a β-Ga₂O₃/Ag/β-Ga₂O₃ multilayer transparent conductive electrode deposited on an α-Al2O₃ (0001) substrate. For the deposition of a continuous Ag layer, we preliminarily performed anultraviolet-ozone pretreatment of the Ga₂O₃ bottom layer. To obtain a stable β-phase of Ga₂O₃, the β-Ga₂O₃/Ag/β-Ga₂O₃ multilayer was annealed at 700 °C under N₂ atmosphere. The transmittance and sheet resistance of the β-Ga₂O₃/Ag/β-Ga₂O₃ multilayer were critically affected by the surface morphology and thickness of the Ag interlayer. The multilayer with optimized thicknesses (β-Ga₂O₃ top layer: 30 nm; Ag interlayer: 12 nm; β-Ga₂O₃ bottom layer: 60 nm) exhibited a resistance of 8.48 Ωsq-1, an average optical transmittance of 87.16% in the ultraviolet wavelength range from 300 to 350 nm, and a figure of merit of 29.81 × 10-3 Ω-1.
Fikadu AlemaTakeki ItohSamuel VogtJames S. SpeckA. Osinsky
Praneeth RangaArkka BhattacharyyaAshwin RishinaramangalamYu Kee OoiMichael A. ScarpullaDaniel FeezellSriram Krishnamoorthy
Aboulaye TraoréM.A. GouveiaHironori OkumuraC. MannequinAndréa FassionT. Sakurai
Liyan WangShuai LiuZiyuan LiuMengjiao HanJunrui TianYuchuan XiaoQiuyun ChenDebo HuLizhi ZhangLixing KangQing Dai
D. A. BaumanD.I. PanovD. A. ZakgeimV. A. SpiridonovА.В. КремлеваA.A. PetrenkoP. N. BrunkovNikita D. PrasolovА. В. НащекинA. M. SmirnovMaxim OdnoblyudovV.E. BougrovА. Е. Романов