Highly conductive epitaxial β -Ga ₂ O ₃ and β -(Al _x Ga _{1− x} ) ₂ O ₃ films by MOCVD

Abstract

Abstract We report on the epitaxial growth of highly conductive degenerated Ge or Si doped β -Ga 2 O 3 and β -(Al x Ga 1− x ) 2 O 3 films by MOCVD. Highly conductive homoepitaxial β -Ga 2 O 3 layers with record conductivities of 2523 and 1581 S cm −1 were realized using Si and Ge dopants. Highly conductive Si doped β -(Al x Ga 1− x ) 2 O 3 films were also grown. The incorporation of Si decreased with the increase in Al content and layer thickness. Record high conductivity of 612 S cm −1 was attained for coherently strained β -(Al 0.12 Ga 0.88 ) 2 O 3 .