W-band CMOS LNA with 29 dB Gain and 5.2 dB Noise Figure for mm-wave Imaging Applications

Abstract

This paper presents a Low Noise Amplifier (LNA) modeled in 65 nm CMOS technology for wideband (110-135) GHz systems. LNA comprises of four stages cascode with L-type matching networks used for input and interstage matching and T-Shape matching networks used at output side. The first stage is designed to improve the noise and input matching and subsequent stages for gain performance. The LNA achieves a flat gain response over a wide bandwidth. The amplifier design is modeled and simulated in Advanced Design System (ADS). The LNA achieves a high gain of 29.11 dB at 124 GHz, Noise Figure (NF) less than 5.2 dB and 3 dB bandwidth of 20 GHz. The S ₁₁ is -19.91 dB at 128 GHz. The LNA dissipates power of 20 mW with 1.8 V supply voltage.