Electro-thermal modeling for InxGa1-xN/GaN based quantum well heterostructures

Mohamed Hichem Gazzah; Bilel Chouchen; Abdelaali Fargi; Hafedh Belmabrouk

doi:10.1016/j.mssp.2019.01.011

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Electro-thermal modeling for InxGa1-xN/GaN based quantum well heterostructures

Mohamed Hichem Gazzah Bilel Chouchen Abdelaali Fargi Hafedh Belmabrouk

Year: 2019 Journal: Materials Science in Semiconductor Processing Vol: 93 Pages: 231-237 Publisher: Elsevier BV

DOI: 10.1016/j.mssp.2019.01.011

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Keywords:

Materials science Condensed matter physics Heterojunction Thermal conduction Band offset Quantum well Poisson's equation Electron Quantum dot Conduction band Physics Optoelectronics Quantum mechanics

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Thermal properties of materials

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Electro-thermal modeling for InxGa1-xN/GaN based quantum well heterostructures

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