Thermodynamics and nucleation kinetics of AlxGa1−xN/GaN and InxGa1−xN/GaN heterostructures

E. Varadarajan; R. Dhanasekaran; P. Ramasamy

doi:10.1016/s0022-0248(01)00839-9

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Thermodynamics and nucleation kinetics of AlxGa1−xN/GaN and InxGa1−xN/GaN heterostructures

E. Varadarajan R. Dhanasekaran P. Ramasamy

Year: 2001 Journal: Journal of Crystal Growth Vol: 225 (2-4)Pages: 141-144 Publisher: Elsevier BV

DOI: 10.1016/s0022-0248(01)00839-9

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Keywords:

Nucleation Kinetics Heterojunction Semiconductor materials Materials science Thermodynamics Chemistry Condensed matter physics Crystallography Semiconductor Physics Optoelectronics Quantum mechanics

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

nanoparticles nucleation surface interactions

Physical Sciences → Earth and Planetary Sciences → Atmospheric Science

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Thermodynamics and nucleation kinetics of AlxGa1−xN/GaN and InxGa1−xN/GaN heterostructures

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