JOURNAL ARTICLE

Comparison of bulk FinFET and SOI FinFET

Yingyu ChenYu-Hsien Lin

Year: 2018 Journal:   MATEC Web of Conferences Vol: 201 Pages: 02009-02009   Publisher: EDP Sciences

Abstract

In this study, we compare the differences and advantages between Bulk FinFET and SOI FinFET. The results are simulated by using the ISE TCAD software. By changing the parameters of the gate voltage, drain voltage and gate length to analysis which characteristic is better. Through the experiment results, we demonstrate that the SOI FinFET have the better characteristics than bulk FinFET[1].

Keywords:
Silicon on insulator Materials science Gate voltage MOSFET Optoelectronics Voltage Electronic engineering Electrical engineering Engineering Silicon Transistor

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Citation History

Topics

Advancements in Semiconductor Devices and Circuit Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Silicon Carbide Semiconductor Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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