Preparation and Optoelectronic Properties of Large-scale MAPbI<sub>3</sub> Single Crystals

张婵婵 ZHANG Chan-chan; 张方辉 ZHANG Fang-hui; 丁利苹 DING Li-ping; 朱晓婷 ZHU Xiao-ting; 李荣金 LI Rong-jin

doi:10.3788/gzxb20184709.0916004

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Preparation and Optoelectronic Properties of Large-scale MAPbI₃ Single Crystals

张婵婵 ZHANG Chan-chan 张方辉 ZHANG Fang-hui 丁利苹 DING Li-ping 朱晓婷 ZHU Xiao-ting 李荣金 LI Rong-jin

Year: 2018 Journal: ACTA PHOTONICA SINICA Vol: 47 (9)Pages: 916004-916004 Publisher: Chinese Optical Society

DOI: 10.3788/gzxb20184709.0916004

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Abstract

采用两步气相沉积法制备了大尺寸(150 μm左右)高质量的MAPbI3单晶, 并通过对衬底表面修饰来调控晶体的成核位置.从衬底温度、载气流速、时间效应等方面系统探究了影响PbI2晶体生长的因素.结果表明:该晶体生长的最优条件分别对应为350℃、20 sccm、20 min.将MAPbI3单晶放置在空气中50天后, 其X衍射特征峰没有明显变化.最后分析该器件的光电特性, 发现其开关比高达104, 响应度为3.8×104 A/W, 且具有较快的响应速度(上升时间:0.03 s; 下降时间:0.15 s).该MAPbI3单晶光电探测器将在光电学领域有非常良好的应用.

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Materials science Scale (ratio) Optoelectronics Physics

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Perovskite Materials and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Semiconductor Detectors and Materials

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Semiconductor Quantum Structures and Devices

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Preparation and Optoelectronic Properties of Large-scale MAPbI₃ Single Crystals

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