Investigation of the Growth of 3C-SiC and 6H-SiC Films on Low-Tilt-Angle Vicinal (0001) 6H-SiC Wafers

J. A. Powell; David Larkin; J. B. Petit; James H. Edgar

doi:10.1007/978-3-642-84804-9_3

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Investigation of the Growth of 3C-SiC and 6H-SiC Films on Low-Tilt-Angle Vicinal (0001) 6H-SiC Wafers

J. A. Powell David Larkin J. B. Petit James H. Edgar

Year: 1992 Springer proceedings in physics Pages: 23-30 Publisher: Springer Nature

DOI: 10.1007/978-3-642-84804-9_3

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Keywords:

Vicinal Materials science Wafer Nucleation Epitaxy Substrate (aquarium) Stacking fault Stacking Chemical vapor deposition Optoelectronics Tilt (camera) Crystallography Nanotechnology Composite material Chemistry Dislocation Geometry Layer (electronics)

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Electromagnetic Compatibility and Noise Suppression

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Investigation of the Growth of 3C-SiC and 6H-SiC Films on Low-Tilt-Angle Vicinal (0001) 6H-SiC Wafers

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