Growth and Characterizaton of 3C-SiC and 6H-SiC Films on 6H-SiC Wafers

BOOK-CHAPTER

Year: 1992 Springer proceedings in physics Pages: 313-321 Publisher: Springer Nature

DOI: 10.1007/978-3-642-84402-7_48

Keywords:

Wafer Materials science Silicon carbide Optoelectronics Engineering physics Nanotechnology Composite material Physics

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