P‐130: Reliable Flexible Elevated Metal Metal‐Oxide IGZO TFTs

Sarah Bebiche; Sisi Wang; Lei Lü; Man Wong; Hoi Sing Kwok

doi:10.1002/sdtp.12314

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JOURNAL ARTICLE

P‐130: Reliable Flexible Elevated Metal Metal‐Oxide IGZO TFTs

Sarah Bebiche Sisi Wang Lei Lü Man Wong Hoi Sing Kwok

Year: 2018 Journal: SID Symposium Digest of Technical Papers Vol: 49 (1)Pages: 1587-1589 Publisher: Wiley

DOI: 10.1002/sdtp.12314

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Abstract

Flexible EMMO IGZO TFTs fabricated on 20 µm thick PI film are reported here. The utilized technology results in high electrical stability, of devices, combined to high robustness against mechanical deformation down to 3%.

Keywords:

Materials science Oxide Metal Optoelectronics Thin-film transistor Robustness (evolution) Composite material Metallurgy Layer (electronics) Chemistry

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Fiber Optic Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

P‐130: Reliable Flexible Elevated Metal Metal‐Oxide IGZO TFTs

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