P‐1.4: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Fluorinated Indium‐Gallium‐Zinc Oxide Channel towards Flexible Applications

Abstract

Towards to the requirements of the low processing temperature for the flexible application, elevated‐metal metal oxide (EMMO) thin‐film transistors with fluorinated indium‐gallium‐zinc oxide (IGZO) channel were fabricated at the highest temperature of 300°C. The effect of V on dependence on channel length was reduced in the fluorinated channel. And the V on of the devices, especially for the short channel with L=2µm, are improved by this fluorination treatment. The results show that the short time plasma treatment is an effective method to decrease the thermal budget and enhance scalability in the flexible application fabrication.