N-doped Al2O3 thin films deposited by atomic layer deposition

Minjae Kim; Kyung-Mun Kang; Yue Wang; Hyung‐Ho Park

doi:10.1016/j.tsf.2018.04.021

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N-doped Al2O3 thin films deposited by atomic layer deposition

Minjae Kim Kyung-Mun Kang Yue Wang Hyung‐Ho Park

Year: 2018 Journal: Thin Solid Films Vol: 660 Pages: 657-662 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2018.04.021

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Keywords:

X-ray photoelectron spectroscopy Doping Thin film Atomic layer deposition Materials science Analytical Chemistry (journal) Nitrogen Surface roughness Oxygen Deposition (geology) Annealing (glass) Chemical engineering Chemistry Nanotechnology Metallurgy Composite material Optoelectronics Environmental chemistry

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

N-doped Al2O3 thin films deposited by atomic layer deposition

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