As2S3 thin films deposited by atomic layer deposition

Abstract

As2S3 thin films were deposited on glass and silicon (100) substrates by atomic layer deposition from tris(dimethylamino)arsine [(CH3)2N)3As] and H2S. Amorphous films were deposited at an exceptionally low temperature of 50 °C. No film growth was observed at higher temperatures. The films were amorphous and contained H and C as the main impurities. The refractive index was 2.3 at 1.0 μm. The films were sensitive to air humidity, but their stability was significantly improved by a protective Al2O3 layer.