High Performance ZnSnO Thin Film Transistor with ZrO<sub>2</sub> Gate Insulator Formed by Atomic Layer Deposition

Jun Li; Chuanxin Huang; Chengyu Zhao; Xingwei Ding; Jianhua Zhang; Xue-Yin Jiang; Zhilin Zhang

doi:10.1166/jno.2018.2198

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High Performance ZnSnO Thin Film Transistor with ZrO₂ Gate Insulator Formed by Atomic Layer Deposition

Jun Li Chuanxin Huang Chengyu Zhao Xingwei Ding Jianhua Zhang Xue-Yin Jiang Zhilin Zhang

Year: 2018 Journal: Journal of Nanoelectronics and Optoelectronics Vol: 13 (2)Pages: 214-220 Publisher: American Scientific Publishers

DOI: 10.1166/jno.2018.2198

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Keywords:

Atomic layer deposition Materials science Layer (electronics) Optoelectronics Insulator (electricity) Thin-film transistor Transistor Deposition (geology) Nanotechnology Electrical engineering Engineering Geology

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ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Gas Sensing Nanomaterials and Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

High Performance ZnSnO Thin Film Transistor with ZrO₂ Gate Insulator Formed by Atomic Layer Deposition

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