Atomic layer deposition deposited high dielectric constant (κ) ZrAlOx gate insulator enabling high performance ZnSnO thin film transistors

Chuanxin Huang; Jun Li; De-Yao Zhong; Chengyu Zhao; Wenqing Zhu; Jianhua Zhang; Xue-Yin Jiang; Zhilin Zhang

doi:10.1016/j.spmi.2017.06.011

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Atomic layer deposition deposited high dielectric constant (κ) ZrAlOx gate insulator enabling high performance ZnSnO thin film transistors

Chuanxin Huang Jun Li De-Yao Zhong Chengyu Zhao Wenqing Zhu Jianhua Zhang Xue-Yin Jiang Zhilin Zhang

Year: 2017 Journal: Superlattices and Microstructures Vol: 109 Pages: 852-859 Publisher: Elsevier BV

DOI: 10.1016/j.spmi.2017.06.011

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Keywords:

Materials science Thin-film transistor X-ray photoelectron spectroscopy High-κ dielectric Atomic layer deposition Amorphous solid Dielectric Thin film Optoelectronics Threshold voltage Sputtering Gate dielectric Transistor Analytical Chemistry (journal) Layer (electronics) Voltage Nanotechnology Nuclear magnetic resonance Electrical engineering

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Atomic layer deposition deposited high dielectric constant (κ) ZrAlOx gate insulator enabling high performance ZnSnO thin film transistors

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