JOURNAL ARTICLE

Atomic layer deposition deposited high dielectric constant (κ) ZrAlOx gate insulator enabling high performance ZnSnO thin film transistors

Keywords:
Materials science Thin-film transistor X-ray photoelectron spectroscopy High-κ dielectric Atomic layer deposition Amorphous solid Dielectric Thin film Optoelectronics Threshold voltage Sputtering Gate dielectric Transistor Analytical Chemistry (journal) Layer (electronics) Voltage Nanotechnology Nuclear magnetic resonance Electrical engineering

Metrics

9
Cited By
0.79
FWCI (Field Weighted Citation Impact)
29
Refs
0.75
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Thin-Film Transistor Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Advanced Memory and Neural Computing
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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