Drain current modeling of gallium nitride schottky barrier MOSFETs

Abstract

The drain current of the Schottky barrier (SB) MOSFET is modeled mathematically by considering both thermionic emissions and Schottky barrier tunneling from the source to the channel. The drain current is dependent on the Schottky barrier height, but is barely affected by the doping concentration. For the depletion type gallium nitride SB MOSFET with both an ITO source and drain electrodes, the threshold voltage is calculated to be 3.5 V, which is similar to the measured value of 3.75 V, and the calculated drain current is 1.2 times higher than the measured value.