Power MOSFETs having Schottky barrier drain contact

K. Sakurai; Tomoki Nishimura; S. Obinata; S. Momota; Tadaaki Nakajima; Seiji Tagami; Sadahiko Furuhata; Y. Inakoshi

doi:10.1109/ispsd.1990.991072

ScienceGate Book Chapters

JOURNAL ARTICLE

Power MOSFETs having Schottky barrier drain contact

K. Sakurai Tomoki Nishimura S. Obinata S. Momota Tadaaki Nakajima Seiji Tagami Sadahiko Furuhata Y. Inakoshi

Year: 2005 Pages: 126-130

DOI: 10.1109/ispsd.1990.991072

Get Full-Text PDF Get Analytical Report

Keywords:

Schottky barrier Materials science Metal–semiconductor junction MOSFET Optoelectronics Power MOSFET Engineering physics Power (physics) Electrical engineering Electronic engineering Transistor Engineering Voltage Physics

Metrics

Cited By

0.00

FWCI (Field Weighted Citation Impact)

Refs

0.09

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Power MOSFETs having Schottky barrier drain contact

Metrics

Topics

Related Documents

Towards Schottky-barrier source/drain MOSFETs

Drain current modeling of gallium nitride schottky barrier MOSFETs

Advanced Source/Drain Engineering for MOSFETs: Schottky Barrier Height Tuning for Contact Resistance Reduction

Advanced Source/Drain Engineering for MOSFETs: Schottky Barrier Height Tuning for Contact Resistance Reduction

Schottky Source/Drain MOSFETs