High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors

Matthew Charles; Yannick Baines; Alexis Bavard; Romain Bouveyron

doi:10.1016/j.jcrysgro.2017.11.004

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High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors

Matthew Charles Yannick Baines Alexis Bavard Romain Bouveyron

Year: 2017 Journal: Journal of Crystal Growth Vol: 483 Pages: 89-93 Publisher: Elsevier BV

DOI: 10.1016/j.jcrysgro.2017.11.004

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Keywords:

Epitaxy Metalorganic vapour phase epitaxy Dislocation Growth rate High-electron-mobility transistor Materials science Optoelectronics Silicon Electron mobility Diffusion Transistor Chemistry Nanotechnology Voltage Composite material Electrical engineering

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors

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