JOURNAL ARTICLE

High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors

Keywords:
Epitaxy Metalorganic vapour phase epitaxy Dislocation Growth rate High-electron-mobility transistor Materials science Optoelectronics Silicon Electron mobility Diffusion Transistor Chemistry Nanotechnology Voltage Composite material Electrical engineering

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10
Cited By
0.52
FWCI (Field Weighted Citation Impact)
14
Refs
0.70
Citation Normalized Percentile
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Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
ZnO doping and properties
Physical Sciences →  Materials Science →  Materials Chemistry
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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