High growth rate metal organic vapor phase epitaxy GaN

Koh Matsumoto; Hiroki Tokunaga; Akinori Ubukata; Kazumasa Ikenaga; Yasushi Fukuda; Toshiya Tabuchi; Yuichiro Kitamura; Shuichi Koseki; Akira Yamaguchi; Kunimasa Uematsu

doi:10.1016/j.jcrysgro.2008.06.009

JOURNAL ARTICLE

High growth rate metal organic vapor phase epitaxy GaN

Koh Matsumoto Hiroki Tokunaga Akinori Ubukata Kazumasa Ikenaga Yasushi Fukuda Toshiya Tabuchi Yuichiro Kitamura Shuichi Koseki Akira Yamaguchi Kunimasa Uematsu

Year: 2008 Journal: Journal of Crystal Growth Vol: 310 (17)Pages: 3950-3952 Publisher: Elsevier BV

DOI: 10.1016/j.jcrysgro.2008.06.009

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Keywords:

Epitaxy Growth rate Full width at half maximum Analytical Chemistry (journal) Hydride Metal Wafer Phase (matter) Metalorganic vapour phase epitaxy Chemistry Materials science Mineralogy Layer (electronics) Optoelectronics Metallurgy Nanotechnology Environmental chemistry

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

High growth rate metal organic vapor phase epitaxy GaN

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