Impact of high energy electron irradiation on high voltage Ni/4H-SiC Schottky diodes

Abstract

We report the results of the high energy (0.9 MeV) electron irradiation impact on the electrical properties of high voltage Ni/4H-SiC Schottky diodes. Within the range of the irradiation dose from 0.2 × 1016 cm−2 to 7 × 1016 cm−2, electron irradiation led to 6 orders of magnitude increase in the base resistance, appearance of slow relaxation processes at pico-ampere current range, and increase in the ideality factor.