Inkjet printed metal insulator semiconductor (MIS) diodes for organic and flexible electronic application

Abstract

All inkjet printed rectifying diodes based on a metal-insulator-semiconductor (MIS) layer stack are presented. The rectifying properties were optimized by careful selection of the insulator interlayer thickness and the layout structure. The different diode architectures based on the following materials are investigated: (1) silver/poly (methylmethacrylate-methacrylic acid)/polytriarylamine/silver, (2) silver/polytriarylamine/poly (methylmethacrylate-methacrylic acid)/silver, and (3) silver/poly (methylmethacrylate-methacrylic acid)/poly-triarylamine/poly(3,4-ethylenedioxythiophene) poly (styrenesulfonate). The MIS diodes show an averaged rectification ratio of 200 and reasonable forward current density reaching 40 mA cm−2. They are suitable for a number of applications in flexible printed organic electronics.