JOURNAL ARTICLE

A BiCMOS Ultra-Wideband 3.1–10.6-GHz Front-End

F.S. LeeAnantha P. Chandrakasan

Year: 2006 Journal:   IEEE Journal of Solid-State Circuits Vol: 41 (8)Pages: 1784-1791   Publisher: Institute of Electrical and Electronics Engineers

Abstract

This paper presents a direct-conversion receiver for FCC-compliant ultra-wideband (UWB) Gaussian-shaped pulses that are transmitted in one of fourteen 500-MHz-wide channels within the 3.1-10.6-GHz band. The receiver is fabricated in 0.18-mum SiGe BiCMOS. The packaged chip consists of an unmatched wideband low-noise amplifier (LNA), filter, phase-splitter, 5-GHz ISM band switchable notch filter, 3.1-10.6-GHz local oscillator (LO) amplifiers, mixers, and baseband channel-select filters/buffers. The required quadrature single-ended LO signals are generated externally. The average conversion gain and input P 1 dB are 32 dB and -41 dBm, respectively. The unmatched LNA provides a system noise figure of 3.3 to 5 dB over the entire band. The chip draws 30 mA from 1.8 V. To verify the unmatched LNA's performance in a complete system, wireless testing of the front-end embedded in a full receiver at 100 Mbps reveals a 10 -3 bit-error rate (BER) at -80 dBm sensitivity. The notch filter suppresses out-of-band interferers and reduces the effects of intermodulation products that appear in the baseband. BER improvements of an order of magnitude and greater are demonstrated with the filter

Keywords:
BiCMOS Baseband Wideband Amplifier Local oscillator Noise figure Electrical engineering Low-noise amplifier Physics Electronic engineering Chip CMOS Engineering Phase noise Transistor

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Citation History

Topics

Radio Frequency Integrated Circuit Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Microwave Engineering and Waveguides
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Ultra-Wideband Communications Technology
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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