JOURNAL ARTICLE

A CMOS Receiver Front-End for 3.1-10.6 GHz Ultra-Wideband Radio

Abstract

The design of a CMOS ultra-wideband (UWB) receiver front-end for high data rate, short-range wireless communications is presented. Targeted for the MB-OFDM UWB standard proposal, the receiver front-end uses a direct-conversion architecture and integrates a wideband low-noise amplifier (LNA) and two double-balanced mixers for quadrature downconversion. Designed in a 0.13-mum CMOS technology and housed in a low-cost LPCC package, the prototype chip delivers 22.9-26.4 dB of power gain and 4.8-7.7 dB of double-sideband noise figure over the entire 3.1-10.6 GHz UWB band. An input third-order intercept point (IIP3) of -11.5 dBm ensures a linear receiver. Operating from a 1.5-V supply, the UWB receiver frontend draws 32 mA dc current

Keywords:
CMOS Wideband Electrical engineering Noise figure Low-noise amplifier RF front end Ultra-wideband Electronic engineering Radio receiver design Amplifier Front and back ends Intermediate frequency Chip Engineering Radio frequency Transmitter Channel (broadcasting)

Metrics

8
Cited By
1.01
FWCI (Field Weighted Citation Impact)
8
Refs
0.77
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Radio Frequency Integrated Circuit Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Ultra-Wideband Communications Technology
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Microwave Engineering and Waveguides
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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