Structure Effects in the gate-all-around Silicon Nanowire MOSFETs

Gengchiau Liang

doi:10.1109/edssc.2007.4450079

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Structure Effects in the gate-all-around Silicon Nanowire MOSFETs

Gengchiau Liang

Year: 2007 Pages: 129-132

DOI: 10.1109/edssc.2007.4450079

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Abstract

10.1109/EDSSC.2007.4450079

Keywords:

Nanowire Materials science MOSFET Optoelectronics Field-effect transistor Silicon Transistor Quantum dot Effective mass (spring–mass system) Band gap Nanotechnology Electrical engineering Physics Engineering Quantum mechanics Voltage

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Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Structure Effects in the gate-all-around Silicon Nanowire MOSFETs

Abstract

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Citation History

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