Dual beam lithography (FIB + EBL) for nanometric structures

Abstract

Focused Ion Beam Lithography is a very powerful technique for directly writing patterns on many substrates Cl], it is a mask-less and resist-less technique that allows a very wide range of applications, providing a resolution down to 10 nm 121. Joined to the Electron Beam Lithography and the Gas Deposition System it became a very versatile tool for many fabrication processes. Using a dual-beam LEO XI31540 composed by a 30 KeV Gallium ion beam column plus a 30 Kev electron beam GEMINI column, we have fabricated many devices with a resolution down to nanometrk scale, by exploiting FIB Milling (FIBM), FIB Gas Assisted Ecthing (FIBGAE) [3] and E-baem or I-beam Induced Deposition [4]. The machine is powered by ELPHY WITH lithographic software and pattern generator.