Low-temperature atomic layer deposition of crystalline manganese oxide thin films

Abstract

We present a new low-temperature atomic layer deposition (ALD) process based on Mn₂(CO)₁₀and ozone as precursors to fabricate crystalline α-Mn₂O₃and Mn₃O₄thin films; the phase composition is controlled by the deposition temperature such that the former phase forms in the range 60–100 °C and the latter in the range 120–160 °C.