High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric

Fukai Shan; Huihui Zhu; Weijin Kong; Jingquan Liu; Byoungchul Shin; Elvira Fortunato; Rodrigo Martins; Ao Liu

doi:10.1039/c6tc02137a

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High-mobility p-type NiO_x thin-film transistors processed at low temperatures with Al₂O₃ high-k dielectric

Fukai Shan Ao Liu Huihui Zhu Weijin Kong Jingquan Liu Byoungchul Shin Elvira Fortunato Rodrigo Martins Ao Liu

Year: 2016 Journal: Journal of Materials Chemistry C Vol: 4 (40)Pages: 9438-9444 Publisher: Royal Society of Chemistry

DOI: 10.1039/c6tc02137a

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Abstract

High-performance p-type NiO_x thin-film transistors are fabricated via a low-cost solution process and exhibit a high mobility of around 15 cm² V⁻¹ s⁻¹.

Keywords:

Materials science Non-blocking I/O Thin-film transistor Dielectric Thin film High-κ dielectric Electron mobility Transistor Analytical Chemistry (journal) Optoelectronics Crystallography Nanotechnology Layer (electronics) Catalysis Electrical engineering

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

High-mobility p-type NiO_x thin-film transistors processed at low temperatures with Al₂O₃ high-k dielectric

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High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric

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