Fabrication and characteristics of GaN-based Microcavity LEDs with high reflectivity AlN/GaN DBRs

Yu Chieh Peng; C. C. Kao; Jui-Yen Tsai; Tien‐Chang Lu; H.H. Yao; Tsung‐Ting Kao; Chia‐Feng Lin; Hao‐Chung Kuo; S. C. Wang

doi:10.7567/ssdm.2005.p7-2

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Fabrication and characteristics of GaN-based Microcavity LEDs with high reflectivity AlN/GaN DBRs

Yu Chieh Peng C. C. Kao Jui-Yen Tsai Tien‐Chang Lu H.H. Yao Tsung‐Ting Kao Chia‐Feng Lin Hao‐Chung Kuo S. C. Wang

Year: 2005

DOI: 10.7567/ssdm.2005.p7-2

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Keywords:

Materials science Light-emitting diode Optoelectronics Fabrication Reflectivity Gallium nitride Wide-bandgap semiconductor Nanotechnology Optics Layer (electronics)

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Plasma Diagnostics and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Fabrication and characteristics of GaN-based Microcavity LEDs with high reflectivity AlN/GaN DBRs

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