Nonpolar GaN-based microcavity using AlN∕GaN distributed Bragg reflector

Abstract

Nonpolar GaN based microcavity (MC) made of a bottom AlN∕GaN distributed Bragg reflector (DBR) and a top dielectric SiO2∕SiNx DBR has been fabricated on a-plane GaN template. The 13 pair AlN∕GaN DBR, centered around 372nm, exhibits a peak reflectivity of ∼95% together with a flat stopband of 30nm width. The cavity mode centered around 390nm is characterized by a full width at half maximum of 4nm. The optical properties of both the DBR and MC are well reproduced when accounting for linear birefringence effects.